Vishay Intertechnology Gen 3 650 V and 1200 V SiC Schottky Diodes Increase Efficiency While Enhancing Electrical Insulation

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Offered in the Compact SlimSMA HV (DO-221AC) Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm
Offered in the Compact SlimSMA HV (DO-221AC) Package, 1 A and 2 A Devices Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm

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